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multicrystalline silicon

Product ID: p-type (Boron Doped

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1. Material: multicrystalline silicon
2. Growth Method: directional solidification
3. Conductivity Type: p-type (Boron Doped),ASTM F42
4. Oxygen Concentration: ≤ 1,0x1017 at./cm3, ASTM F 121
5. Carbon Concentration: ≤ 1x1018 at./cm3, ASTM F 121
* Oxygen Content measurement by ASTM 1188 and used calculation coefficient for ppm atomic is 4,9 and and for at/cm3 is 2,45E+17.

6. Square side: (156.0 0.5) mm
7. Symmetry as per the drawing in the Enclosure No. 1
8. Thickness: (200 30) 痠, ASTM F 533
9. TTV: < 50 痠, ASTM F657
10. BOW < 50 痠, ASTM F 534
11. Surface Saw Damage Depth 痠 < 20 (< 15 typically)
12. Saw Traces 痠 2 盜, ASTM F 28

15. Surface: as-cut and cleaned; visible contamination, oil or grease, finger prints, soap stains, slurry stains, epoxy/water stains, cracks are not allowed; edge chips under 1 mm from the edge of the wafer are allowed.
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16. Customer may request to receive reference samples

17. Wafers are being stacked into batches of 50-100 wafers each. Then it is sealed into polyethylene film. Protective paper among wafers is upon customer request. 500 -600 wafers in total are being packed into Styrofoam box. Styrofoam boxes are being packed into pasteboard cases. Wafers are being packed in such a manner as to ensure minimal damage to the product during transportation.
18. All polystyrene boxes of wafers are identified with: box number; type of wafer; number of wafers per box; all contributing ingots numbers; thickness of wafers; date of packing / output inspection.
Features
  • Surface
    • as-cut and cleaned; visible contamination, oil or grease, finger prints, soap stains, slurry stains, epoxy/water stains, cracks are not allowed; edge chips under 1 mm from the edge of the wafer are allowed.

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Multicrystalline silicon wafers