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MITSUBISHI Silicon RF Power MOSFET Transistors, RoHS Compliant, 30MHz, 6W, TO-220S

Product ID: RD06HHF1

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  • Silicon RF Power Semiconductors
  • RF Transistors
  • Si RF Power MOSFET
  • 12.5V Operation High Output Power Si MOS FET
  • Metal-Oxide-Semiconductor Field-Effect Transistors , MOSFET
  • RD06HHF1 is a MOS FET type transistor specifically designed for HF RF Power amplifiers applications
  • Applications: For output stage of high power amplifiers in HF band mobile radio sets
Specifications
• Drain to Source Voltage(VDSS): 50V(Vgs = 0V)• Gate to Source Voltage(VGSS): ±20V(Vds = 0V)• Channel Dissipation(Pch): 27.8W(Tc = 25°C)• Input Power(Pin): 0.3W(Zg = Z1 = 50Ω)• Drain Current(ID): 3A• Drain Cutoff Current(IDSS)(Max): 10μA(VDS = 17V , VGS = 0V)• Gate Cutoff Current(IGSS)(Max): 1μA(VGS = 10V , VDS = 0V)• Gate Threshold Voltage(VTH)(Min): 1.9V(VDS = 12V , IDS = 1mA)• Gate Threshold Voltage(VTH)(Max): 4.9V(VDS = 12V , IDS = 1mA)• Output Power(Pout)(Min): 6W(VDD = 12.5V , Pin = 0.15W , f = 30MHz , Idq = 0.5A)• Output Power(Pout)(Typ): 10W(VDD = 12.5V , Pin = 0.15W , f = 30MHz , Idq = 0.5A)• Drain Efficiency(ηD)(Min): 55%(VDD = 12.5V , Pin = 0.15W , f = 30MHz , Idq = 0.5A)• Drain Efficiency(ηD)(Typ): 65%(VDD = 12.5V , Pin = 0.15W , f = 30MHz , Idq = 0.5A)• Channel Temperature(Tch): 150°C• Storage Temperature(Tstg): -40°C to +150°C• Brand Name: MITSUBISHI • Mounting Type: Through Hole / DIP(Dual in -line package)• Package Outline: TO-220S• Lead Count: 3• Packing: 50 units / tube• Compatible with many other wireless communication products • Mass stock on-hand merchandise supply• We supply various electronic components and welcome your inquiries
Features
• Lead-Free Type • RoHS Compliant• High Power Gain: Pout > 6W, Gp > 16dB @Vdd = 12.5V, f = 30MHz

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